BF966SB SPC, SCHALTUNG, FUNKTION
Teil Name: BF966SB
Hersteller:
Verpackung:
Beschreibung: 20v30ma103var
Pins:
Temperatur: Min. °C | Max °C
Größe: KB
BF966SB
- BF960
N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE.DEPLETION MODE - BF961
N??Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode - BF961A
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode - BF961B
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode - BF963
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 50MA I(D) | SOT-103 - BF964
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode - BF964S
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode - BF964SA
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-103VAR - BF964SB
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-103VAR - BF965
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-103 - BF966
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-103 - BF966S
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode - BF966SA
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-103VAR - BF966SB
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-103VAR - BF967
SILICON PLANAR TRANSISTOR