2SD235306 SPC, SCHALTUNG, FUNKTION
Teil Name: 2SD235306
Hersteller: Toshiba Semiconductor
Verpackung:
Beschreibung:
Pins:
Temperatur: Min. °C | Max °C
Größe: KB
- 2SD235
EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) - 2SD2350
TRANSISTOR | BJT | DARLINGTON | NPN | 300V V(BR)CEO | 6A I(C) | TO-220 - 2SD2351
General Purpose Transistor 0.15A) - 2SD2351U
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23VAR - 2SD2351V
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23VAR - 2SD2351VWT106
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SC-70 - 2SD2351W
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23VAR - 2SD2352
TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS) - 2SD2353
TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS) - 2SD235306
Silicon Triple Diffused Type - 2SD2353_06
Silicon NPN Triple Diffused Type - 2SD2356
TRANSISTORS(SELECTION GUIDE APPLICATIONS FUNCTIONS) - 2SD2357
Silicon epitaxial planer type(For low-frequency amplification) - 2SD2358
Transistors - 2SD2359
Silicon epitaxial planer type(For low-frequency amplification)