2SD122006 SPC, SCHALTUNG, FUNKTION
Teil Name: 2SD122006
Hersteller: Toshiba Semiconductor
Verpackung:
Beschreibung:
Pins:
Temperatur: Min. °C | Max °C
Größe: KB
- 2SD1220
POWER AMPLIFIER APPLICATIONS - 2SD122006
Silicon Epitaxial Type Process) - 2SD1220O
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1.5A I(C) | TO-251AA - 2SD1220R
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1.5A I(C) | TO-251AA - 2SD1220Y
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1.5A I(C) | TO-251AA - 2SD1220_06
Silicon NPN Epitaxial Type (PCT Process) - 2SD1221
AUDIO FREQUENCY POWER AMPLIFIER APPLICATION - 2SD1221GR
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-251 - 2SD1221O
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-251 - 2SD1221Y
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-251 - 2SD1222
EPITAXIAL TYPE (SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE, POWER AMPLIFIER APPLICATIONS) - 2SD1223
SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPUCATIONS - 2SD1224
PULSE MOTOR DRIVE, HAMMER DRIVE APPLICATIONS SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS - 2SD1225
2SD1225 - 2SD1225M
TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 1A I(C) | SIP