2SB1667_06 SPC, SCHALTUNG, FUNKTION
Teil Name: 2SB1667_06
Hersteller: Toshiba Semiconductor
Verpackung:
Beschreibung:
Pins:
Temperatur: Min. °C | Max °C
Größe: KB
- 2SB166040ML
SCHOTTKY BARRIER DIODE CHIPS - 2SB1661
From datasheet system - 2SB166100MA
SCHOTTKY BARRIER DIODE CHIPS - 2SB1664
Epitaxial Planar Silicon Darlington Transistor Driver Applications - 2SB1667
TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) - 2SB1667(SM)
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-263AB - 2SB166706
Silicon Triple Diffused Type - 2SB1667O(SM)
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-252AA - 2SB1667Y(SM)
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-252AA - 2SB1667_06
Silicon PNP Triple Diffused Type - 2SB1668
POWER AMPLIFICATION (-100V, - 2SB1669
SILICON EPITAXIAL TRANSISTOR HIGH-SPEED SWITCHING - 2SB1669-S
SILICON EPITAXIAL TRANSISTOR HIGH-SPEED SWITCHING - 2SB1669-Z
SILICON EPITAXIAL TRANSISTOR HIGH-SPEED SWITCHING