2SB106706 SPC, SCHALTUNG, FUNKTION
Teil Name: 2SB106706
Hersteller: Toshiba
Verpackung:
Beschreibung:
Pins:
Temperatur: Min. °C | Max °C
Größe: KB
- 2SB1061
Silicon Triple Diffused Frequency Power Amplifier - 2SB1062
Epitaxial Plannar - 2SB1063
Power Transistors - 2SB1063P
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 5A I(C) | SOT-186 - 2SB1063Q
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 5A I(C) | SOT-186 - 2SB1063R
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 5A I(C) | SOT-186 - 2SB1064
Silicon Power Transistors - 2SB1065
Silicon Power Transistors - 2SB1066M
Epitaxial Planar Silicon Transistors - 2SB1067
TRANSISTOR (MICRO NOTER DRIVE, HAMMER DRIVE, SWITCHING, POWER AMPLIFIER APPLICATIONS) - 2SB106706
Silicon Epitaxial Type (Darlington Power Transistor) - 2SB1067_06
Silicon PNP Epitaxial Type (Darlington Power Transistor) - 2SB1068
SILICON TRANSISTOR - 2SB1068K
TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 2A I(C) | TO-92 - 2SB1068L
TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 2A I(C) | TO-92