2SA196207 SPC, SCHALTUNG, FUNKTION
Teil Name: 2SA196207
Hersteller: Toshiba Semiconductor
Verpackung:
Beschreibung:
Pins:
Temperatur: Min. °C | Max °C
Größe: KB
- 2SA1960
Silicon Epitaxial - 2SA1961
Silicon epitaxial planer type - 2SA1961P
TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 70MA I(C) | SC-71 - 2SA1961Q
TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 70MA I(C) | SC-71 - 2SA1962
POWER AMPLIFIER APPLICATIONS - 2SA196207
Power Amplifier Applications - 2SA1962O
TRANSISTOR | BJT | PNP | 230V V(BR)CEO | 15A I(C) | TO-247VAR - 2SA1962OTU
Epitaxial Silicon Transistor - 2SA1962R
TRANSISTOR | BJT | PNP | 230V V(BR)CEO | 15A I(C) | TO-247VAR - 2SA1962RTU
Epitaxial Silicon Transistor - 2SA1962_07
Power Amplifier Applications - 2SA1963
Epitaxial Planar Silicon Transistor - 2SA1964
audio amplifier output stages/TV velocity modulation (-160V, -1.5A) - 2SA1964D
BJT - 2SA1964E
BJT