2N6667_05 SPC, SCHALTUNG, FUNKTION
Teil Name: 2N6667_05
Hersteller: ONSEMI
Verpackung:
Beschreibung: 6080
Pins:
Temperatur: Min. °C | Max °C
Größe: KB
- 2N6660
N-Channel Enhancement-Mode Vertical DMOS FETs - 2N666007
N-Channel Enhancement-Mode Vertical DMOS FETs - 2N6660CSM4
N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR - 2N6660JAN
N-Channel Enhancement-Mode MOSFET Transistor(?????????????0V,??????0.99A??????????OSFET????? - 2N6660X
N-CHANNEL ENHANCEMENT MODE TRANSISTOR - 2N6660_07
N-Channel Enhancement-Mode Vertical DMOS FETs - 2N6661
N-Channel 80-V 90-V MOSFETS - 2N6661CSM4
N-CHANNEL ENHANCEMENT MODE MOSFET - 2N6661JAN
N-Channel Enhancement-Mode MOSFET Transistor(?????????????0V,??????0.86A??????????OSFET????? - 2N6666
PLASTIC MEDIUM-POWER SILICON TRANSISTORS - 2N6667
POWER TRANSISTORS(65W) - 2N666705
Darlington Silicon Power Transistors SILICON DARLINGTON POWER TRANSISTORS 60?80 - 2N6667G
Darlington Silicon Power Transistors SILICON DARLINGTON POWER TRANSISTORS 60?80 - 2N6667_05
Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60−80 V, 65 W - 2N6668
SILICON POWER DARLINGTON TRANSISTOR