2SC3930W SPC, SCHALTUNG, FUNKTION
Teil Name: 2SC3930W
Hersteller: Galaxy Semi-Conductor Holdings Limited
Verpackung:
Beschreibung:
Pins:
Temperatur: Min. °C | Max °C
Größe: KB
- 2SC3900
Switching Applications - 2SC3901
EPITAXIAL PLANAR SILICON TRANSISTORS - 2SC3902
160V/1.5A Switching Applications - 2SC3902R
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-126 - 2SC3902S
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-126 - 2SC3902T
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-126 - 2SC3904
Silicon epitaxial planer type(For 2GHz band low-noise amplification) - 2SC3906K
High-voltage Amplifier Transistor(120V, 50mA) - 2SC3906KE
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | SC-59 - 2SC3906KR
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | SC-59 - 2SC3906KS
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | SC-59 - 2SC3907
PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER CONVERTER) - 2SC3908
MITSUBISHI POWER TRANSISTOR - 2SC3910
Silicon Triple-Diffused Junction Mesa Type - 2SC3912
Switching Applications(with Bias Resistance)